发明名称 |
GASEOUS PHASE GROWING DEVICE |
摘要 |
<p>A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container. <IMAGE></p> |
申请公布号 |
EP1383160(A1) |
申请公布日期 |
2004.01.21 |
申请号 |
EP20020705147 |
申请日期 |
2002.03.13 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HASEBE, KAZUHIDE;YAMAMOTO, HIROYUKI;UMEHARA, TAKAHITO;KAWAKAMI, MASATO |
分类号 |
C23C16/44;C23C16/455;C23C16/458;C30B35/00;H01L21/205;H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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