| 摘要 |
The invention relates to a method of preparing regular shaped non-tabular high chloride silver halide host crystals, more particularly host crystals on which silver bromide is selectively deposited on the edges and/or corners of said host crystals. Silver halide crystals are prepared, which exhibit excellent high intensity reciprocity law failure and are suitable for high intensity, short time exposure. The method comprises a nucleation and a growth step in which a first peptizer having a binding capacity to silver ions of less than 55 milliVolts measured at pH 5 and a second peptizer having a binding capacity to silver ions of at least 55 milliVolts measured at pH 5 are present during at least the growth step. |
