发明名称 |
RECESSED GATE DRAM TRANSISTOR AND METHOD |
摘要 |
<p>A method of forming memory devices, such as DRAM access transistors, having recessed gate structures is disclosed. Field oxide areas for isolation are first formed over a semiconductor substrate subsequent to which transistor grooves are patterned and etched in a silicon nitride layer. The field oxide areas adjacent to the transistor grooves are then recessed, so that subsequently deposited polysilicon for gate structure formation can be polished relative to the adjacent and elevated silicon nitride.</p> |
申请公布号 |
EP1382059(A2) |
申请公布日期 |
2004.01.21 |
申请号 |
EP20020731519 |
申请日期 |
2002.04.26 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
DURCAN, MARK, D.;LEE, ROGER |
分类号 |
H01L21/28;H01L21/336;H01L21/8242;H01L27/108;H01L29/423;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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