| 摘要 |
1,131,675. Semi-conductor devices. HITACHI Ltd. 29 June, 1967 [11 July, 1966], No. 30144/67. Heading H1K. Regions of enhanced conductivity are provided at the surface of a semi-conductor body to prevent current passing between separated devices by an inversion layer which would otherwise be formed under metallic tracks running across the passivation. As shown in Fig. 3 a NOT unit is formed by a P-channel enhancement mode IGFET 12a, 14b, 13a the maximum gate potential of which is clamped to the breakdown voltage of a diode 16a, 11a. Parasitic IGFET action (16a, 17b, 12a) is prevented by the provision of a N<SP>+</SP> region 11b. Particularly if the extent beneath the surface conductors of the highly doped region is large, sharp capacitance variations between conductors and the semi-conductor substrate are also prevented. Reference has been directed by the Comptroller to Specifications 1,059,739 and 1,051,720. |
