发明名称 |
Semiconductor light-receiving module capable of converting light into current efficiently at light absorbing layer |
摘要 |
A semiconductor light-receiving module comprises a semiconductor light-receiving element (100) having at least a light incident facet (12), a light absorbing layer (4), an upper cladding layer (3) formed on the light absorbing layer (4), and an incident light direction device (200) which directs light to the light incident facet (12) of the semiconductor light-receiving element (100). The incident light direction device (200) directs to irradiate the light obliquely to the light incident facet (12) of the semiconductor light-receiving element (100), such that an effective index of the light irradiated to the light incident facet (2) becomes higher than a refractive index of the upper cladding layer (3). <IMAGE> |
申请公布号 |
EP1383174(A2) |
申请公布日期 |
2004.01.21 |
申请号 |
EP20030016175 |
申请日期 |
2003.07.16 |
申请人 |
ANRITSU CORPORATION |
发明人 |
KAWANO, KENJI;YOSHIDAYA, HIROAKI;HIRAOKA, JUN;SASAKI, YIUCHI;KAWAZURA, EIJI;MATSUMOTO, SATOSHI |
分类号 |
G02B6/12;G02B6/42;H01L31/0232 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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