| 摘要 |
<p>An adjustable current mode differential sense amplifier (70) is disposed to be in communication with a selected memory cell RM and a reference cell RR having a predetermined value. The amplifier (70) is able to sense current and voltage changes associated with the selected memory cell RM and compare them to current and voltage changes associated with the reference cell RR. The operating point of the sensing amplifier (70) may be changed by modifying threshold voltages related to the back gate (74) bias applied to selected transistors (72, 73) in the amplifier. This adjusting capability enables currents or voltages of the sense amplifier (70, 80) to be set when a first bias voltage V1 is applied to a selected memory cell RM in order to maximize the sensitivity of the amplifier (70). When a second bias voltage V2 is applied to the memory cell RM and the reference cell RR in order to determine the value of the memory cell RM, the amplifier (70) is able to sense slight changes in the currents or voltages associated with the selected memory cell RM and the reference cell RR and compare them to determine the state of the memory cell RM. This increased sensitivity enables the amplifier (70) to have a substantially increased dynamic range without introducing components that might adversely affect the memory circuitry parameters. <IMAGE></p> |
