发明名称 Semiconductor device
摘要 This invention provides a liquid crystal display device having high display quality by preventing rays of light diffracted at an end part of a light shielding layer because such rays are irradiated to a semiconductor layer and invite fluctuation of TFT characteristics. To completely cut off the rays of light 117 diffracted at an end part of a third light shielding layer 108, a gate electrode 104 and a second light shielding portion 106 cover a semiconductor layer 103. In consequence, the irradiation of the rays of diffracted light can be prevented, fluctuation of TFT characteristics can be avoided and satisfactory display images can be acquired.
申请公布号 US6680488(B2) 申请公布日期 2004.01.20
申请号 US20020123520 申请日期 2002.04.17
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 SHIBATA HIROSHI
分类号 G02F1/1368;G02F1/1362;H01L21/336;H01L29/04;H01L29/786;H01L31/0336;(IPC1-7):H01L29/04 主分类号 G02F1/1368
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