发明名称 |
Lateral high voltage transistor having spiral field plate and graded concentration doping |
摘要 |
A lateral high voltage transistor device is disclosed. The transistor includes a gate, a drain, and a source. The drain is located apart from the gate to form an intermediate drift region. The drift region has variable dopant concentration between the drain and the gate. In addition, a spiral resistor is placed over the drift region and is connected to the drain and either the gate or the source of the transistor.
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申请公布号 |
US6680515(B1) |
申请公布日期 |
2004.01.20 |
申请号 |
US20000710101 |
申请日期 |
2000.11.10 |
申请人 |
MONOLITHIC POWER SYSTEMS, INC. |
发明人 |
HSING MICHAEL REN |
分类号 |
H01L21/336;H01L29/06;H01L29/40;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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