发明名称 |
Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement |
摘要 |
A current confinement element that can be used in constructing light-emitting devices. The current confinement element includes a top layer and an aperture-defining layer. The top layer includes a top semiconducting material of a first conductivity type that is transparent to light. The aperture-defining layer includes an aperture region and a confinement region. The aperture region includes an aperture semiconducting material of the first conductivity type that is transparent to light. The confinement region surrounds the aperture region and includes a material that has been doped to provide a high resistance to the flow of current. In one embodiment of the invention, the confinement region includes a semiconducting material of a second conductivity type.
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申请公布号 |
US6680963(B2) |
申请公布日期 |
2004.01.20 |
申请号 |
US20010912801 |
申请日期 |
2001.07.24 |
申请人 |
LUX NET CORPORATION |
发明人 |
LIAO ANDREW SHUH-HUEI;HASNAIN GHULAM;KUO CHIHPING;KUO HAO-CHUNG;SHI ZHIQING;TRIEU MINH NGOC |
分类号 |
H01S5/183;H01S5/22;(IPC1-7):H01S5/183 |
主分类号 |
H01S5/183 |
代理机构 |
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主权项 |
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地址 |
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