| 摘要 |
A ferroelectric memory comprises a first memory cell which is provided at a point where a first word line and a first or second bit line intersect, and has a first ferroelectric capacitor formed with a ferroelectric material as an insulating film, capacitor; a first sense amplifier connected to the first and second bit lines, for amplifying a signal read from the first memory cell; a second memory cell which is provided at a point where a second word line and a third or fourth bit line intersect, and has a second ferroelectric capacitor formed with a ferroelectric material as an insulating film; a second sense amplifier connected to the third and fourth bit lines, for amplifying a signal read from the second memory cell; a first switch for electrically connecting the first bit line and the third bit line; and a second switch for electrically connecting the second bit line and the fourth bit line.
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