Semiconductor device having a dual damascene interconnect structure and method for manufacturing same

摘要

A semiconductor device includes a first interlayer film of SiN and a second interlayer film of SiO2 that are formed in the order over a semiconductor substrate having, at a surface, a conductive layer. In the same or different etching process, a contact or via hole is formed through the first interlayer film above the conductive layer, while an interconnect trench is formed through the second interlayer film.