| 摘要 |
1,193,837. Semi-conductor devices. UNION CARBIDE CORP. 18 July, 1967 [19 July, 1966], No. 32962/67. Heading H1K. In the manufacture of an oxide passivated silicon planar transistor the contact structures are built by a series of metallizations. First aluminium is alloyed into holes in the oxide to provide ohmic contacts then excess aluminium is removed, and successive layers of molybdenum and gold are next applied overall, these layers then being patterned to provide tracks extending from the ohmic contacts to areas intended as external contact sites. The body is photoresist masked, 22, to expose only these sites and gold, 24, is evaporated overall. A second photoresist layer 25 is applied, again exposing only the external contact sites, and contacts are built up at these sites by electroplating gold on them. Both photo-resist layers are then dissolved away together with that part of the vapour-deposited gold layer 24 which is sandwiched between them. The transistor is thus provided with separate raised contacts 36 and may be flip-chip bonded into a flat hermetic package. Similar contact structures may be provided for planar FETs and for MOS devices and for integrated circuits. |
