| 摘要 |
A semiconductor device comprises a drain region (1') formed on the reverse side of a semiconductor substrate (1), a base region (2) formed on the drain region (1') and having parts partially exposed at plural positions on a principal plane of the substrate (1), a source region (3) which has one plane in contact with the base region (2) and the other plane exposed on the principal plane of the substrate (1), a gate insulating film (4) formed only on a wall of a trench (10), which is formed in the substrate (1) to reach the drain region (1'), a gate electrode (5) formed so as to be embedded in the trench (10) and a top surface thereof is situated above the junction plane of the source (3) and base (2) regions and at a position lower than the principal plane of the substrate (1), and an insulating film (6) embedded above the gate electrode (5) in the trench (10). <IMAGE>
|
