METHOD FOR FABRICATING INSULATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating an insulation layer of a semiconductor device is provided to minimize the thickness of spin-on-glass(SOG) on a metal pattern and form a good via profile by improving planarization when the metal pattern is coated with the SOG. CONSTITUTION: A semiconductor substrate(10) having a metal pattern(52) is prepared. An atomic layer deposition(ALD) oxide material is deposited on the semiconductor substrate to form an ALD oxide layer(60). An undoped silicate glass(USG) oxide material is deposited on the ALD oxide layer to form an USG oxide layer(62). The undoped silicate glass oxide layer is coated with spin-on-glass(SOG) to form an SOG insulation layer(64). An oxide material is deposited on the SOG insulation layer to form an oxide layer.