| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent a separation phenomenon of Boron by nitrifying an oxide layer within a trench. CONSTITUTION: A pad oxide layer(20) and a pad nitride layer(30) are formed on an upper surface of a semiconductor substrate(10). A trench is formed by etching partially the pad nitride layer(30), the pad oxide layer(20), and the semiconductor substrate(10). The first oxide layer(50) is formed within the trench. The first oxide layer(50) is nitrified. A nitride layer(60) is formed on a surface of the semiconductor substrate(10). The second oxide layer(70) is formed on the surface of the semiconductor substrate(10). The pad nitride layer(30) is exposed by a planarization process. The pad nitride layer(30) is removed by a cleaning process. The first oxide layer(50) is removed by the cleaning process.
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