| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor device is provided to minimize losses of a spacer and to prevent bridge of salicide by performing etch-back of an organic substance layer after removing an USG layer of a logic region. CONSTITUTION: A polysilicon gate(22) with a spacer(23) is formed on a silicon substrate(21) defined by a photodiode region(A) and a logic region(B). After depositing an USG layer on the resultant structure, the USG layer of the logic region(B) is selectively removed. Then, an organic substance layer is coated on the resultant structure. The polysilicon gate(22) of the photodiode region(A) is exposed and the polysilicon gate and the substrate of the logic region(B) are simultaneously exposed. A metal silicide layer(27) is then formed on the exposed polysilicon gate and the substrate.
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