METHOD FOR FORMING RESIST PATTERN USING SILICON-CONTAINING WATER-SOLUBLE POLYMER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a resist pattern using a silicon-containing water-soluble polymer and a method for fabricating a semiconductor device are provided to enhance the etch tolerance by improving a process for forming the resist pattern. CONSTITUTION: A plurality of resist patterns(15a,15b) are formed on an upper surface of a semiconductor substrate(10). A silicon-containing water-soluble layer is formed on the semiconductor substrate(10) including the resist patterns(15a,15b). A plurality of silicon-containing material layers(25a,25b) are formed on the resist patterns(15a,15b) by reacting the resist patterns(15a,15b) with the silicon-containing water-soluble layer. The silicon-containing water-soluble layer is removed by using deionized water. The semiconductor substrate(10) is etched by using the resist patterns(15a,15b) as an etch mask.