| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to reduce resistance of metal patterns by depositing a hard mask on a metal film using tungsten. CONSTITUTION: A semiconductor substrate(110) with a contact plug(120) connected to a junction(112) is prepared. A metal film as interconnection and a tungsten film as hard mask are sequentially formed on the resultant structure. A tungsten hard mask(124) is formed by selectively etching the tungsten film and a metal interconnection(130) is formed by selectively etching the metal film. After forming an interlayer dielectric(140) on the resultant structure, a via hole is formed to expose the tungsten hard mask. A via plug(142) is formed in the via hole.
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