DUAL PORT STATIC MEMORY CELL AND SEMICONDUCTOR MEMORY DEVICE COMPRISING THE SAME

摘要

PURPOSE: A dual port static memory cell and a semiconductor memory device comprising the same are provided to minimize the increase of a layout area as accelerating a data read time at the same time. CONSTITUTION: The first transmission transistor is connected between a bit line(BL) and the first node and has a gate connected to a word line(WL). The second transmission transistor is connected between a bit line bar(BLB) and the second node and has a gate connected to the above word line. A latch is connected between the first node and the second node. And a PMOS transistor is connected between the second node and a scan bit line and has a gate connected to a scan control line(SS). Each of the first and the second transmission transistor is constituted with a NMOS transistor.