| 摘要 |
PURPOSE: A method for manufacturing a flash memory is provided to improve contact profile and to prevent contact voids of an interlayer dielectric caused by annealing at high temperature. CONSTITUTION: A tunnel oxide layer(304), a floating gate(306), a dielectric film(308), a control gate(310) and an anti-reflective coating layer are sequentially formed on a semiconductor substrate(302). A common source line is formed by using SAS(Self Aligned Source) etching. Impurity ions are implanted into a source/drain forming region. A spacer(318) composed of nitride and oxide is formed at both sidewalls of the stacked structure. An interlayer dielectric(320) is deposited on the resultant structure and annealed. A contact hole is formed by selectively etching the interlayer dielectric. Plug ion-implantation and annealing processes are sequentially carried out. Then, a metal interconnection is formed on the resultant structure.
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