SOI WAFER AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An SOI(Silicon On Insulator) wafer and a manufacturing method thereof are provided to be capable of reducing manufacturing processes and fabrication cost. CONSTITUTION: An SOI wafer is provided with the first semiconductor substrate(100a) including a plurality of isolation layers(110) for defining device formation regions, and a well region(101a) and a buried layer(101b) alternately formed at the device formation regions of the first semiconductor substrate. The SOI wafer further includes the second semiconductor substrate connected with the first semiconductor substrate for contacting the lower portion of each isolation layer. At this time, the second semiconductor substrate has an SOI layer(120) for electrically isolating the lower portion of the device formation region. Preferably, a trench type silicon oxide layer is used as the isolation layer.