发明名称 |
SEMICONDUCTOR MEMORY DEVICE COMPRISING OUTPUT DRIVER FOR HIGH FREQUENCY OPERATION |
摘要 |
PURPOSE: A semiconductor memory device comprising an output driver for a high frequency operation is provided to output high frequency data without data distortion. CONSTITUTION: According to the semiconductor memory device(700) comprising an output driver(710) where the first and the second NMOS transistor(N1,N2) are connected serially and a drain of the first NMOS transistor is connected to an output pad(DQ) and a source of the second NMOS transistor is connected to a ground voltage(VSS), the first internal voltage(VGATE) is applied to a gate of the first NMOS transistor and the second internal voltage(VINT) is applied to a gate of the second NMOS transistor. The second internal voltage has a level lower than an external power supply voltage.
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申请公布号 |
KR20040004839(A) |
申请公布日期 |
2004.01.16 |
申请号 |
KR20020038890 |
申请日期 |
2002.07.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, DONG SU;SONG, GI HWAN;SONG, HO SEONG |
分类号 |
G11C11/40;G11C7/10;(IPC1-7):G11C11/40 |
主分类号 |
G11C11/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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