MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE, AND SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: To provide a manufacturing method of a semiconductor device for reducing the number of manufacturing processes and difficulty in working by suppressing the missing of a plug or cylinder falling. CONSTITUTION: The manufacturing method of the semiconductor memory device includes a step for forming an electrode film of a cylinder type capacitor from platinum group electrode materials; a step for silicifying a part of the electrode film; a step for selectively removing the silicified portion to separate capacitor cells and forming a lower electrode of the cylinder type capacitor; a step for forming a dielectric film on the lower electrode; and a step for forming an upper electrode on the dielectric film.