| 摘要 |
PURPOSE: A GaN crystal substrate and a fabricating method therefor are provided to simplify a fabrication process by reacting directly Ga sublimated from GaN powder and nitrogen separated from ammonia gas. CONSTITUTION: A GaN crystal substrate includes a substrate(310) and a GaN crystal layer. The substrate(310) is used as a base for growing a GaN crystal. The GaN crystal layer is formed on the substrate(310). The GaN crystal layer is formed by reacting Ga sublimated from GaN powder and N separated from ammonia gas. The GaN crystal layer is formed by recrystallizing Ga and N under the temperature of 800 to 1200 degrees centigrade and the pressure of 760 Torr. The GaN crystal layer further includes a GaN buffer layer(320) and a GaN cap layer(340). |
