| 摘要 |
PURPOSE: A flash memory cell and a method for manufacturing the same are provided to simplify manufacturing processes by using a single polysilicon layer and to improve electron retention property without using an ONO dielectric film. CONSTITUTION: An n-well is formed in a semiconductor substrate of a flash memory cell region. A p-well is formed in the n-well. A deep isolation layer(304) is formed at an isolation region. A control gate(305) is formed by implanting dopants into odd or even number of p-well. A floating gate(307) is then formed by forming sequentially an oxide layer and a polysilicon layer and patterning. A drain(308) is then formed by implanting the exposed p-well.
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