METHOD FOR MANUFACTURING FLASH MEMORY

摘要

PURPOSE: A method for manufacturing a flash memory is provided to prevent the reduction of source resistance by implanting phosphorous ions into a source/drain region. CONSTITUTION: A tunnel oxide layer(404), a floating gate(406), a dielectric film(408), a control gate(410) and an anti-reflective coating layer are sequentially formed on a semiconductor substrate(402). A common source line is formed by using SAS(Self Aligned Source) etching. Arsenic ions and phosphorous ions are sequentially implanted into a source/drain forming region. Then, a contact plug and a metal interconnection are formed on the resultant structure.