METHOD FOR MANUFACTURING STACK GATE FLASH MEMORY CELL

摘要

PURPOSE: A method for manufacturing a stack gate flash memory cell is provided to improve room retention by removing trap center in a sidewall oxide layer of a floating gate. CONSTITUTION: A stacked gate(314) is formed by sequentially forming a tunnel oxide layer, a floating gate, a dielectric film, a control gate, a silicide layer and a hard mask on a substrate(300). An oxide layer(316) is formed at both sidewalls of the floating gate and the control gate. An HTO(High Temperature Oxide) layer(318) is formed at sidewalls of the stacked gate. The first silicon nitride layer(320) is deposited on the HTO layer. A source/drain region is formed in the substrate. After depositing the second silicon nitride layer on the resultant structure and patterning the resultant structure, a spacer including the HTO layer, the first and second silicon nitride layer is then formed.