| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to increase operation speed and improve the stabilization of a buried N+(BN junction), by performing an anisotropic etch process on a silicon substrate so that a sloped trench is formed, by vertically implanting BN ions so that the BN junction is formed in the periphery of the trench and by filling an oxide layer in the trench. CONSTITUTION: An insulation layer is formed on a silicon substrate(10) having an isolation layer and a well. A photoresist pattern is formed on the insulation layer to open a BN layer formation region. The insulation layer is over-etched by an anisotropic plasma etch process while the photoresist pattern is used as a mask so that a trench is formed in the silicon substrate. The BN ions for forming the BN junction(60) are vertically implanted while the insulation layer is used as a mask, and the insulation layer is eliminated. After an oxide layer is deposited on the resultant structure, even the upper portion of the silicon substrate is isotropically etched to form a BN layer.
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