| 摘要 |
PURPOSE: A method for forming a gate of a semiconductor device is provided to easily obtain fine line-width of a gate by etching sidewalls of a hard mask using isotropic etching. CONSTITUTION: A gate oxide layer(200), a conductive layer(300) and a hard mask are sequentially formed on a semiconductor substrate(100). A hard mask pattern is formed by selectively etching the hard mask. A fine hard mask pattern(400b) is formed by etching sidewalls of the hard mask pattern using isotropic etching of wet-etching. Then, the conductive layer is selectively etched using the fine hard mask pattern(400b) as a mask, thereby forming a gate.
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