发明名称 INTERNAL POWER SUPPLY VOLTAGE GENERATION CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: An internal power supply voltage generation circuit of a semiconductor memory device is provided to supply an internal power supply voltage of different levels selectively to an internal circuit of a chip by being adapted to an operation mode. CONSTITUTION: According to the semiconductor memory device comprising ports receiving an external power supply voltage(EVC) and an internal circuit(56) operating in response to the input of an internal power supply voltage, the internal power supply voltage generation circuit downs the external power supply voltage and then provides an internal power supply voltage of the first level to the internal circuit in response to the first operation mode, and clamps the external power supply voltage to a voltage of the second level lower than the first level and then provides it to the internal circuit in response to the second operation mode. The first operation mode is a normal operation mode and the second operation mode is a DPD mode, and they are complementary each other.
申请公布号 KR20040005093(A) 申请公布日期 2004.01.16
申请号 KR20020039387 申请日期 2002.07.08
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHUN, GI CHEOL;HONG, SANG PYO;LEE, SANG JAE;SIM, JAE YUN
分类号 G05F1/46;(IPC1-7):G11C5/14 主分类号 G05F1/46
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