发明名称 LATENCY CONTROL CIRCUIT OF SYNCHRONOUS SEMICONDUCTOR DEVICE FOR HIGH FREQUENCY OPERATION AND METHOD THEREOF
摘要 PURPOSE: A latency control circuit of a synchronous semiconductor device for high frequency operation and a method thereof are provided to improve an operation speed of the synchronous semiconductor device. CONSTITUTION: According to the latency control circuit of a synchronous semiconductor device generating a latency control signal determining the generation time of output data, a sampling clock generation circuit(100) generates a number of sampling clocks having different phases by receiving a sampling master clock. A transfer control signal generation circuit(300) generates a number of transfer control signals having different phases by receiving an output clock. And a latency control signal generation circuit(200) latches read information in response to the sampling clocks, and outputs the latched read information to the latency control signal in response to the transfer control signals. The sampling master clock has a delay time difference relatively to the output clock.
申请公布号 KR20040005517(A) 申请公布日期 2004.01.16
申请号 KR20020040094 申请日期 2002.07.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SONG, HO YEONG
分类号 G11C8/18;G11C7/10;G11C7/22;(IPC1-7):G11C8/18 主分类号 G11C8/18
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