METHOD FOR FORMING DIELECTRIC FILM OF SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A method for forming a dielectric film of a semiconductor memory device is provided to be capable of omitting the step of PTO(Probe Test 0) in ONO structure. CONSTITUTION: A semiconductor substrate is loaded in a chamber. After rising the temperature in the chamber, the chamber is stabilized at nitrogen atmosphere. Pre-purge is performed to restrain the formation of a native oxide using N2O gas. An oxide layer is then deposited by flowing mixed gases of SiH2Cl2 and N2O into the chamber. Post-purge is then performed using N2O gas.