| 摘要 |
PURPOSE: A method for forming a dual damascene pattern is provided to be capable of simplifying processes and improving stability. CONSTITUTION: An interlayer dielectric(110) is formed on a semiconductor substrate(100). The first photoresist pattern(120a) containing a crosslinkable agent is formed to define a via hole pattern. The second photoresist pattern(130) containing silicon is formed to define a trench pattern. A via hole(140) is formed by selectively etching the interlayer dielectric using the second and first photoresist pattern as a mask. After removing selectively the exposed first photoresist pattern(120a), a trench(160) is formed by using the second photoresist pattern(130) as a mask.
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