STRUCTURE OF SEMICONDUCTOR DEVICE FOR PROCESSING DEFECT OF CELL AND PROCESSING METHOD THEREOF

摘要

PURPOSE: A structure of a semiconductor device for processing a defect of a cell and a processing methods thereof are provided to cure the defect of the cell by implanting the hydrogen-nitrogen gas into a center etch portion of a top electrode laminated on a bottom electrode. CONSTITUTION: A charge storage apparatus for semiconductor device includes a bottom electrode(10) for storing charges and a top electrode(20) stacked on an upper surface of the bottom electrode(10). A structure of a semiconductor device for processing a defect of a cell includes a center etch portion(22) and a dummy cell(12). The center etch portion(22) is formed on a center of the top electrode(20). The center etch portion(22) has an exposed bottom portion. The hydrogen-nitrogen gas is implanted into the exposed bottom portion of the center etch portion(22) in an annealing process. The bottom electrode(10) exposed by the center etch portion(22) is formed with the dummy cell(12).