| 摘要 |
PURPOSE: A transistor is provided to improve characteristics of a device related to base resistance such as a power gain and a noise characteristic by decreasing the base resistance and reducing parasitic capacitance between an emitter and a base. CONSTITUTION: A substrate(2) is almost plate. A P-type base region(8) is formed in a predetermined depth from the surface of the substrate. A plurality of N-type poly emitter regions(10) are formed in the surface of the P-type base region. A plurality of base metals(16) are formed in the surface of the P-type base region which is an outer circumference of the N-type poly emitter region. The first insulation layer(11) is formed on the base region to open the upper surface of the N-type poly emitter region. A tungsten metal(14) is deposited on the poly emitter region. The second insulation layer(12) is formed on the first insulation layer as an outer circumference of the tungsten metal to open the upper surface of the tungsten metal. The third insulation layer(13) is formed on the second insulation layer as an outer circumference of the tungsten metal to open the upper surface of the tungsten metal. An emitter metal(18) is deposited on the third insulation layer, connected to the tungsten metal.
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