| 摘要 |
PURPOSE: A two-wavelength laser diode and a fabricating method thereof are provided to simplify a fabrication process by forming plural LD chips having different optical wavelengths on the same substrate. CONSTITUTION: A two-wavelength laser diode includes a GaAs substrate(400), the first and the second LD chips(410,420), a coupled of p-type electrodes(430a,430b), and a common n-type electrode(440). The first and the second LD chips(410,420) are formed on the GaAs substrate(400). The first and the second LD chips(410,420) have an n-type layer, an active layer, and a p-type layer. The p-type electrodes(430a,430b) are electrically connected to the p-type layers of the first and the second LD chips(410,420). The common n-type electrode(440) is opposite to the p-type electrodes(430a,430b). The common n-type electrode(440) is formed on a bottom of the GaAs substrate(400).
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