发明名称 Rotating beam ion implanter
摘要 Methods and apparatus are provided for ion implantation of a workpiece. The apparatus includes an ion beam generator for generating an ion beam, a deflection device for deflecting the ion beam to produce a deflected ion beam, and a drive device for rotating the deflection device about an axis of rotation to thereby cause the deflected ion beam to rotate about the axis of rotation and to produce a rotating ion beam. The apparatus may include a controller for controlling the deflection and/or the rotation of the ion beam to produce a desired distribution of the ion beam over the surface of the workpiece. The apparatus may further include an angle compensation device for causing the rotating ion beam to have a substantially constant angle of incidence on the workpiece.
申请公布号 US2004007679(A1) 申请公布日期 2004.01.15
申请号 US20020299935 申请日期 2002.11.19
申请人 VARIAN SEMICONDUCTOR EQUIPMENT 发明人 VIVIANI GARY L
分类号 H01J37/147;H01J37/317;(IPC1-7):H01J37/317 主分类号 H01J37/147
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