| 摘要 |
PURPOSE: A method for planarizing a semiconductor device is provided to prevent degradation of an O3-TEOS layer by hydrophobicity surface of a lower layer. CONSTITUTION: An oxide layer(30) with hydrophilicity is formed on a semiconductor substrate(10) having a lower conductive layer(20). For hydrophobicity of the surface of the oxide layer, an HMDS(HexaMethyl-DiSilazane) layer(40) is formed on the oxide layer. Then, an O3-TEOS layer(50) as a planarized layer is formed on the entire surface of the resultant structure.
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