| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound thin film solar cell by arranging an n type buffer layer for heterojunction on a light absorbing layer constituted of a p type compound semiconductor formed on a back electrode, and to obtain a stable pn junction of high property by optimizing the diffusion of n type dopant to the interface of the light absorbing layer and the formation of a buffer layer by controlling the mixture and temperature of the solution at the time of forming a buffer layer by a CBD method. <P>SOLUTION: This method comprises a first process for diffusing n type dopant to the interface of a light absorbing layer, a second process for forming a first buffer layer 61 constituted of a surface reaction rate-determining region, and a third process for forming a second buffer layer 62 constituted of a supply rate-determining region on the first buffer layer. <P>COPYRIGHT: (C)2004,JPO</p> |
