| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To accurately eliminate a defect in a Levenson type phase shifting mask having an undercut structure in such a way as not to cause lowering of light intensity. <P>SOLUTION: When a black or white defect is eliminated, a Cr pattern 1 on the defect is removed with focused ion beams 4, a quartz or glass substrate 3 including undercut width is shaved with the beams while feeding assist gas which does not lower transmittance from a gas gun 5, and then the undercut structure or a similar structure is accurately reproduced with a shielding film 8 formed by CVD using electron or ion beams 6 while feeding source gas for the shielding film from a gas gun 7, whereby the defect is accurately eliminated while maintaining light intensity even in the defect eliminated region. <P>COPYRIGHT: (C)2004,JPO</p> |
