| 摘要 |
PROBLEM TO BE SOLVED: To overcome a problem that an impurity concentration is not the same within a gate depending on a position since an impurity is doped into the neighboring end of a gate also when the impurity is doped into a source region. SOLUTION: Offsets are arranged by forming LOCOS regions 9 between the ends of an electrode of the gate G and a first diffusion region 8 to be the source/drain region. When the impurity is doped into the gate G, due to the offsets, the impurity can be doped only into the gate G. Since the offsets are arranged, the channel region under the electrode of the electrically isolated gate G is connected with the first diffusion region 8 through a second diffusion region 10. COPYRIGHT: (C)2004,JPO
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