发明名称 Method for detecting wafer level defect
摘要 A method for detecting wafer level defect by die-to-aerial image comparison is disclosed. The method utilizes patterns in a database which are used to form photo masks utilized in photolithography processes to simulate aerial images. The simulation aerial images are then compared with die images produced by the photo masks to find out wafer level defects without missing any repeating defect induced by the photo masks and mistaking any process deviation as a wafer level defect.
申请公布号 US2004008879(A1) 申请公布日期 2004.01.15
申请号 US20020192539 申请日期 2002.07.11
申请人 UNITED MICROELECTRONICS CORP. 发明人 LIN BENJAMIN SZU-MIN
分类号 G06K9/00;G06T7/00;H01L21/66;(IPC1-7):G06K9/00 主分类号 G06K9/00
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