发明名称 |
Floating gate memory cell and forming method |
摘要 |
A floating gate memory cell comprises a substrate with a drain and a source separated by a channel, a floating gate separated from the channel by a first insulation layer, and a control gate separated from the floating gate by a second insulation layer. The deposition environment is chosen so that the grain size of at least a portion of the floating gate opposite the first insulation layer is about 50-500 Å.
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申请公布号 |
US2004007733(A1) |
申请公布日期 |
2004.01.15 |
申请号 |
US20020180168 |
申请日期 |
2002.06.26 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
LUOH TUUNG |
分类号 |
H01L21/28;H01L29/423;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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