发明名称 |
INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To increase the degree of vertical separation between a passing wordline and a strap. <P>SOLUTION: If the thickness of an insulation layer is decreased in an SOI integrated circuit including a trench capacitor DRAM array, crosstalk is caused between a trench capacitor and the passing wordline 214 which passes over the trench capacitor. The buried strap on a capacitor center electrode 105 is enabled to come into contact with the backside of an SOI layer 60 by increasing the depth of a recess at the upper part of the trench and laterally undercutting the insulating layer, thereby increasing the degree of vertical separation between the passing wordline 214 and the strap. <P>COPYRIGHT: (C)2004,JPO |
申请公布号 |
JP2004015053(A) |
申请公布日期 |
2004.01.15 |
申请号 |
JP20030151411 |
申请日期 |
2003.05.28 |
申请人 |
INTERNATL BUSINESS MACH CORP <IBM> |
发明人 |
MANDELMAN JACK A;HO HERBERT L |
分类号 |
H01L21/334;H01L21/8242;H01L21/84;H01L27/108;H01L27/12;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L21/334 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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