| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high-performance, stable forming method of a silicon-based thin film for securing high productivity. <P>SOLUTION: In the forming method of the silicon-based thin film, under an atmospheric pressure or pressure close to the atmospheric pressure, a power of at least 1W/cm<SP>2</SP>with a high-frequency voltage exceeding 100 kHz is supplied between opposite electrodes for discharging, thus changing a reactive gas into plasm, allowing a base to be exposed to the reactive gas changed into the plasma, and hence forming the thin film on the base. <P>COPYRIGHT: (C)2004,JPO</p> |
