| 摘要 |
PROBLEM TO BE SOLVED: To provide a reliable face light-emitting semiconductor laser device that operates with a stable light output for a long time. SOLUTION: The face light-emitting type semiconductor laser device 30 comprises an n-type lower semiconductor multilayer film reflector 32, a lower cladding layer 33, an active layer 34, an upper cladding layer 35, a p-type upper semiconductor multilayer film reflector 36, and a p-type GaAs cap layer 37 successively formed on an n-type GaAs substrate 31 as constituting layers. In at least one semiconductor layer of the constituting layers, hydrogen concentration containing a hydrogen simple substance, the compound of hydrogen and other substances, and the complex of hydrogen and inherent weakness is equal to or less than 5 x 10<SP>18</SP>cm<SP>-3</SP>. COPYRIGHT: (C)2004,JPO
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