SEED FILM AND FORMING METHOD THEREOF, Cu WIRE AND FORMING METHOD THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, AND MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enhance the burying property into a recessed part provided on a substrate in the case of forming a Cu wire on the substrate. SOLUTION: After a Ti film is formed on a wafer W provided with an insulation layer 110 formed with the recessed part T on a Si conductive substrate layer 100, a barrier film 101 is formed by the MOCVD method. Then a seed film 102 made of a Cu-Al alloy is deposited without applying plasma processing to the barrier film 101. Further, a Cu film 103 is formed on the seed film 102 by the plating processing to form the Cu wire. COPYRIGHT: (C)2004,JPO