| 摘要 |
PROBLEM TO BE SOLVED: To provide a MRAM or the like having high speed, high capacity, and mass productivity by dissolving problems of stabilization of reading of data from resistance elements especially magnetoresistive effect elements and dispersion of resistance values of magnetoresistive effect elements or the like caused in mass production. SOLUTION: In an assembly in which a plurality of memory cells constituting a MRAM are arranged in a matrix state, a first power source supplying a power source to each memory cell and a plurality of amplifying elements amplifying output signals of each memory cell are arranged respectively at the outer side of two columns of the most outer column (or two rows of the most outer row) of opposing memory cells in the assembly. COPYRIGHT: (C)2004,JPO
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