发明名称 |
METHOD FOR CONTROLLING THE EXTENT OF NOTCH OR UNDERCUT IN AN ETCHED PROFILE USING OPTICAL REFLECTOMETRY |
摘要 |
A method and apparatus for controlling lateral etching during an etching process. The method and apparatus includes laterally etching a lower layer of a stack of layers in a processing chamber, where an endpoint detection system radiates a spectrum of light over the lower layer being etched and an area over the stack of layers proximate to the lower layer being etched. The intensity of light reflected from at least one of the stacked layers positioned lateral to the lower layer being etched is then measured. An endpoint detection system terminates the etching process upon measuring a predetermined metric associated with the intensity of reflected light from the at least one of the stacked layers. |
申请公布号 |
WO2004006306(A2) |
申请公布日期 |
2004.01.15 |
申请号 |
WO2003US18476 |
申请日期 |
2003.06.12 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
JONES, STEVEN, J.;DESHMUKH, SHASHANK, C.;DAVIS, MATTHEW, F.;LIAN, LEI;YANG, CHAN-SYUN |
分类号 |
H01L21/00;H01L21/28;H01L21/3213 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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