| 摘要 |
<p>A reflective mask and reflective maskblanks capable of accurately forming the shape of a fine mask pattern, providing a sufficient contrast in a pattern inspection, and accurately transferring a pattern, wherein a multi-layer reflective film (12) for reflecting exposure light, a buffer layer (13), and an adsorbent layer for absorbing the exposure light are formed on a substrate (11) in that order, the adsorbent layer is formed in a laminated structure having an uppermost layer (15) and a lower layer (14) other than the uppermost layer (15), and the uppermost layer (15) has a reflectance of 20% or less to light with an inspection wave length used for the inspection of the pattern formed on the adsorbent layer, and is formed of an inorganic material having a resistance against requirements for etching used when the pattern is formed on the lower layer.</p> |
